FDMS8622 FDMS8622 is an N-Channel 100V MOSFET from On Semiconductor, rated for 4.8A continuous drain current at Ta=25°C and 16.5A at Tc=25°C. It features a low Rds(on) of 56mOhm at 10V and is housed in a 8-PowerTDFN package.
Mfr Part #:

FDMS8622

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS8622 is an N-Channel 100V MOSFET from On Semiconductor, rated for 4.8A continuous drain current at Ta=25°C and 16.5A at Tc=25°C. It features a low Rds(on) of 56mOhm at 10V and is housed in a 8-PowerTDFN package.
✓ Total Stock: 48,695 pcs
$ Price Range: $0.55 - $1.99

FDMS8622 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDMS8622 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS8622 Description

Short technical summary and product information.

The FDMS8622 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for a maximum drain-to-source voltage of 100V and can handle continuous drain currents of up to 4.8A at ambient temperature (Ta=25°C) and up to 16.5A at case temperature (Tc=25°C). The device features a low maximum on-resistance of 56mOhm at a gate-source voltage of 10V and a drain current of 4.8A.

 

With a gate threshold voltage of 4V maximum at 250µA, the MOSFET can be driven with logic-level voltages. The total gate charge is 7nC at 10V, and input capacitance is 400pF at 50V. The device is capable of dissipating up to 2.5W at ambient temperature and 31W at case temperature, operating over a junction temperature range of -55°C to 150°C.

 

This MOSFET is surface-mount packaged in an 8-PowerTDFN case, with the supplier device package being 8-PQFN (5x6). It is suitable for various power management and switching applications requiring high efficiency. The part is RoHS3 compliant and REACH unaffected, with a moisture sensitivity level of 1 (unlimited).

FDMS8622 Quick Information

Product Type: Single N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDMS8622 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDMS8622 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS8622 Estimated Pricing

Qty Low High
1+ $1.99 $1.99
10+ $1.23 $1.23
100+ $0.81 $0.81
500+ $0.64 $0.64
1,000+ $0.55 $0.55
3,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8622 Features

  • N-Channel 100V power MOSFET.
  • Low 56mOhm typical on-resistance.
  • High continuous drain current up to 16.5A.
  • Surface-mount 8-PowerTDFN package.
  • RoHS3 compliant and REACH unaffected.

FDMS8622 Applications

  • Power management in DC-DC converters.
  • Motor control and load switching.
  • Battery protection circuits.
  • General purpose switching applications.

FDMS8622 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDMS8622?

The maximum drain-to-source voltage (Vdss) is 100 V.

What package is the FDMS8622 available in?

It is available in an 8-PowerTDFN surface-mount package, also known as 8-PQFN (5x6).

What is the operating temperature range of the FDMS8622?

The junction temperature range is -55°C to 150°C.

Is the FDMS8622 RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified).

What is the continuous drain current rating of the FDMS8622?

The continuous drain current is 4.8 A at Ta=25°C and 16.5 A at Tc=25°C.

What is the on-resistance (Rds(on)) of the FDMS8622?

The maximum on-resistance is 56 mOhm at Vgs=10V and Id=4.8A.

What is the gate threshold voltage of the FDMS8622?

The maximum gate threshold voltage (Vgs(th)) is 4 V at Id=250 µA.

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