| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor FDMS86202 is a PowerTrench Type N-Channel MOSFET. It is designed for high-performance power switching applications, offering a maximum continuous drain current of 64A and a maximum drain-source voltage of 120V.
This MOSFET has a low maximum drain-source resistance of 13.2mΩ and a maximum power dissipation of 156W. It operates within a temperature range of -55°C to 150°C. The component features a typical gate charge of 45nC and a forward voltage of 1.2V.
Packaged in an 8-pin WDFN, this device is designed for surface mounting. Its dimensions include a height of 1.05mm and a length of 5.1mm. The PowerTrench technology from ON Semiconductor aims to provide superior design reliability by reducing voltage spikes and overshoot.
This MOSFET is suitable for various power management solutions where efficient switching and high current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
64A.
13.2mΩ.
45nC.
WDFN-8 surface mount package.
-55°C to 150°C.
156W.