FDMS86200DC The FDMS86200DC is an N-Channel MOSFET from onsemi with a 150V drain-source voltage rating and 40A continuous drain current at 25°C case temperature. It features a low 17mΩ maximum on-resistance at 10V gate drive.
Mfr Part #:

FDMS86200DC

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS86200DC is an N-Channel MOSFET from onsemi with a 150V drain-source voltage rating and 40A continuous drain current at 25°C case temperature. It features a low 17mΩ maximum on-resistance at 10V gate drive.
✓ Total Stock: 125,573 pcs
$ Price Range: $2.64 - $6.04

FDMS86200DC Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,040 pcs
5040 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS86200DC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS86200DC Description

Short technical summary and product information.

The FDMS86200DC is an N-Channel MOSFET manufactured by onsemi using the POWERTRENCH process with Shielded Gate technology. It is rated for a maximum drain-to-source voltage of 150V and a maximum continuous drain current of 40A at a case temperature of 25°C, with a pulsed drain current rating of 100A. The device offers a maximum on-resistance of 17mΩ at a gate-to-source voltage of 10V and a drain current of 9.3A, and 25mΩ at 6V gate drive.

 

The MOSFET is housed in an 8-PowerTDFN package, also known as the DUAL COOL DFN8 package, which provides top-side cooling capability. The package supports surface mount mounting and is supplied on 13-inch reels with 12mm tape width, with a shipping quantity of 3000 units per reel. The device has a maximum power dissipation of 125W at a case temperature of 25°C and 3.2W at an ambient temperature of 25°C.

 

Electrical characteristics include a maximum gate-to-source voltage of ±20V, a maximum gate threshold voltage of 4V at 250µA drain current, and a maximum input capacitance of 2955pF at 75V drain-source voltage. The device also features a single pulse avalanche energy rating of 294mJ and a drain-source breakdown voltage of 150V minimum. The operating junction temperature range is -55°C to 150°C.

FDMS86200DC Quick Information

Product Type: N-Channel MOSFET
Series: FDMS86200DC
Canonical Name: N-Channel PowerTrench Shielded Gate MOSFET, 150V, 40A, 17mΩ, DUAL COOL 8-PowerTDFN
Subcategory: Single N-Channel MOSFET

FDMS86200DC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS86200DC Estimated Pricing

Qty Low High
1+ $6.04 $6.04
10+ $4.04 $4.04
100+ $2.90 $2.90
500+ $2.64 $2.64
3,000+ $2.64 $2.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86200DC Features

  • 150V maximum drain-to-source voltage.
  • 40A continuous drain current at 25°C.
  • 17mΩ maximum on-resistance at 10V.
  • DUAL COOL top-side cooling package.
  • 100% UIL tested for avalanche robustness.

FDMS86200DC Applications

  • Primary MOSFET in DC-DC converters.
  • Secondary synchronous rectifier in power supplies.
  • Load switch for power management circuits.

FDMS86200DC FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS86200DC?

The maximum drain-to-source voltage (Vdss) is 150V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current is 40A at a case temperature of 25°C, and 9.3A at an ambient temperature of 25°C.

What is the on-resistance of the FDMS86200DC?

The maximum on-resistance is 17mΩ at a gate-to-source voltage of 10V and drain current of 9.3A, and 25mΩ at 6V and 7.8A.

What is the operating temperature range of this device?

The operating junction temperature range is -55°C to 150°C.

What package is the FDMS86200DC available in?

The device is available in an 8-PowerTDFN package, also known as 8-PQFN (5x6), for surface mount applications.

Is the FDMS86200DC RoHS compliant?

The datasheet states the device is RoHS compliant.

What is the maximum power dissipation of this MOSFET?

The maximum power dissipation is 125W at a case temperature of 25°C and 3.2W at an ambient temperature of 25°C.

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