FDMS86200 N-Channel MOSFET with 150V drain-source voltage, 35A continuous drain current, and 18mΩ on-resistance. Surface mount in 8-PowerTDFN package.
Mfr Part #:

FDMS86200

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 150V drain-source voltage, 35A continuous drain current, and 18mΩ on-resistance. Surface mount in 8-PowerTDFN package.
✓ Total Stock: 56,531 pcs
$ Price Range: $1.35 - $3.65

FDMS86200 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDMS86200 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS86200 Description

Short technical summary and product information.

The FDMS86200 is an N-Channel MOSFET from On Semiconductor, utilizing advanced Shielded Gate POWERTRENCH technology. It is designed for DC-DC conversion applications and offers a maximum drain-source voltage of 150V and continuous drain current of 35A at case temperature 25°C (9.6A at ambient). The device features a low on-resistance of 18mΩ typical at VGS=10V, ensuring high efficiency.

 

Key electrical characteristics include a gate threshold voltage of 2.0V to 4.0V, input capacitance of 2715pF, and total gate charge of 46nC. The MOSFET is 100% UIL tested and supports pulsed drain current up to 100A. Thermal performance is supported by a junction-to-case thermal resistance of 1.2°C/W and maximum power dissipation of 104W at case temperature.

 

The device is housed in an 8-PowerTDFN surface mount package (8-PQFN 5x6mm) and is RoHS compliant with MSL1 rating. It is suitable for high-efficiency power conversion circuits where low Rds(on) and fast switching are required.

FDMS86200 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDMS86200 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDMS86200 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS86200 Estimated Pricing

Qty Low High
1+ $3.65 $3.65
10+ $2.39 $2.39
100+ $1.66 $1.66
500+ $1.35 $1.35
3,000+ $1.35 $1.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86200 Features

  • 150V drain-source voltage rating.
  • 35A continuous drain current at TC=25°C.
  • Low on-resistance of 18mΩ maximum.
  • Shielded Gate MOSFET technology.
  • RoHS compliant and MSL1 rated.

FDMS86200 Applications

  • DC-DC conversion applications.
  • Power management systems.

FDMS86200 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS86200?

150V.

What is the package type of the FDMS86200?

8-PowerTDFN (8-PQFN 5x6mm) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDMS86200 RoHS compliant?

Yes, RoHS3 compliant.

What is the typical on-resistance?

15mΩ at VGS=10V, ID=9.6A.

What is the maximum power dissipation?

104W at case temperature 25°C, 2.5W at ambient.

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