FDMS86163P P-Channel MOSFET rated for 100V drain-to-source voltage and 50A continuous drain current. Features 22mΩ on-resistance at VGS=-10V.
Mfr Part #:

FDMS86163P

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated for 100V drain-to-source voltage and 50A continuous drain current. Features 22mΩ on-resistance at VGS=-10V.
✓ Total Stock: 43,914 pcs
$ Price Range: $1.66 - $4.38

FDMS86163P Available from 6 distributors

✓ Authorised
✓ Non-Authorised

FDMS86163P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS86163P Description

Short technical summary and product information.

The FDMS86163P is a P-Channel MOSFET produced by On Semiconductor using the advanced POWERTRENCH process. It is designed to minimize on-state resistance while maintaining superior switching performance. This device is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 50A at case temperature 25°C (7.9A at ambient 25°C). The on-resistance is typically 22mΩ at VGS=-10V and 30mΩ at VGS=-6V.

 

Key electrical characteristics include a gate threshold voltage range of -4V to -2V, input capacitance of 4085pF at VDS=50V, and total gate charge of 59nC at VGS=10V. The device is 100% UIL tested and supports single pulse avalanche energy up to 486mJ. It is optimized for fast switching and load switch applications.

 

The FDMS86163P is offered in an 8-PowerTDFN package (8-PQFN 5x6mm) for surface mount assembly. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The operating junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 1.2°C/W and junction to ambient is 50°C/W.

FDMS86163P Quick Information

Product Type: P-Channel MOSFET
Series: PowerTrench
Canonical Name: On Semiconductor FDMS86163P P-Channel MOSFET
Subcategory: P-Channel MOSFET

FDMS86163P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS86163P Estimated Pricing

Qty Low High
1+ $4.38 $4.38
10+ $2.87 $2.87
100+ $1.98 $1.98
500+ $1.66 $1.66
3,000+ $1.66 $1.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86163P Features

  • Max drain-source voltage rating of 100V.
  • Continuous drain current up to 50A.
  • Low on-resistance of 22mΩ at 10V gate drive.
  • RoHS compliant and Pb-Free.
  • Optimized for fast switching applications.

FDMS86163P Applications

  • Active clamp switch applications.
  • Load switch applications.
  • Fast switching applications.

FDMS86163P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS86163P?

The maximum drain-to-source voltage is 100V.

What package does the FDMS86163P come in?

It comes in an 8-PowerTDFN surface mount package, also known as 8-PQFN (5x6mm).

What is the operating temperature range of the FDMS86163P?

The operating junction temperature range is -55°C to +150°C.

Is the FDMS86163P RoHS compliant?

Yes, the device is RoHS compliant and Pb-Free and Halogen Free/BFR Free.

What is the on-resistance of the FDMS86163P?

The maximum on-resistance is 22mΩ at VGS=-10V and ID=-7.9A, and 30mΩ at VGS=-6V and ID=-5.9A.

What is the gate threshold voltage?

The gate threshold voltage ranges from -4V (minimum) to -2V (maximum) with a typical value of -2.8V at VGS=VDS and ID=-250µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A at case temperature 25°C, and 7.9A at ambient temperature 25°C.

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