| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,515 pcs
|
34515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET uses ON Semiconductor's advanced POWERTRENCH process with Shielded Gate technology. It features a maximum drain-source voltage of 100V, continuous drain current of 80A at case temperature 25°C, and a low on-resistance of 4.85mΩ at VGS=10V and ID=16A. The device is designed for high efficiency power conversion applications such as primary DC-DC converters, secondary synchronous rectifiers, and load switches. It is offered in a Power56 (8-PowerTDFN) surface mount package with MSL1 moisture sensitivity level. The component is RoHS compliant and Pb-Free. Thermal characteristics include a maximum junction temperature of 150°C, with junction-to-case thermal resistance of 1.1°C/W and junction-to-ambient of 45°C/W (1 in² pad).
| Qty | Low | High |
|---|---|---|
| 1+ | $5.56 | $5.56 |
| 10+ | $3.70 | $3.70 |
| 100+ | $2.64 | $2.64 |
| 500+ | $2.34 | $2.34 |
| 1,000+ | $2.24 | $2.24 |
| 3,000+ | $2.12 | $2.12 |
| 6,000+ | $1.95 | $1.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
8-PowerTDFN (Power56) surface mount package.
-55°C to 150°C.
Yes, RoHS3 compliant and Pb-Free.
4.85mΩ at VGS=10V, ID=16A; 7.8mΩ at VGS=6V, ID=13A.
80A at TC=25°C, 16A at TA=25°C.
4V maximum at ID=250µA.