FDMS86102LZ FDMS86102LZ is an N-Channel MOSFET from On Semiconductor rated for 100V drain-source voltage and 22A continuous drain current. It features low on-resistance of 25mOhm and comes in an 8-PQFN surface-mount package.
Mfr Part #:

FDMS86102LZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS86102LZ is an N-Channel MOSFET from On Semiconductor rated for 100V drain-source voltage and 22A continuous drain current. It features low on-resistance of 25mOhm and comes in an 8-PQFN surface-mount package.
✓ Total Stock: 1,086 pcs
$ Price Range: $1.21 - $3.25

FDMS86102LZ Available from 1 distributor

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✓ Non-Authorised
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FDMS86102LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS86102LZ Description

Short technical summary and product information.

The FDMS86102LZ is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-efficiency power switching applications. This device utilizes MOSFET (Metal Oxide) technology and is rated for a maximum drain-to-source voltage of 100V, making it suitable for a wide range of power management circuits.

 

With a continuous drain current rating of 22A at case temperature (Tc) and 7A at ambient temperature (Ta), the FDMS86102LZ delivers robust current handling capability. The maximum on-resistance is 25mOhm at a gate drive of 10V and 7A drain current, enabling low conduction losses in power conversion circuits. The device supports gate drive voltages of 4.5V and 10V, providing flexibility for various gate driver configurations.

 

The FDMS86102LZ features a maximum gate charge of 22nC at 10V and input capacitance of 1305pF at 50V drain-source voltage, contributing to efficient switching performance. The gate threshold voltage is 2.5V maximum at 250µA drain current, and the maximum gate-source voltage is ±20V. Power dissipation is rated at 2.5W at ambient temperature and 69W at case temperature, with an operating junction temperature range of -55°C to 150°C.

 

This MOSFET is housed in an 8-PowerTDFN package with a supplier device package of 8-PQFN (5x6), designed for surface-mount assembly. The compact package enables efficient thermal management and space-saving PCB layouts, making the FDMS86102LZ suitable for power supplies, DC-DC converters, motor control, and other power switching applications.

FDMS86102LZ Quick Information

Product Type: MOSFET
Series: FDMS86102LZ
Canonical Name: N-Channel Power MOSFET, 100V, 22A, 8-PQFN
Subcategory: Single N-Channel MOSFET

FDMS86102LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS86102LZ Estimated Pricing

Qty Low High
1+ $3.25 $3.25
10+ $2.11 $2.11
100+ $1.46 $1.46
500+ $1.21 $1.21
3,000+ $1.21 $1.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86102LZ Features

  • N-Channel MOSFET with 100V rating.
  • 22A continuous drain current at Tc.
  • Low 25mOhm maximum on-resistance.
  • Surface-mount 8-PQFN (5x6) package.
  • Operating temperature range -55°C to 150°C.

FDMS86102LZ Applications

  • Suitable for DC-DC converter circuits.
  • Used in power supply switching stages.
  • Ideal for motor control applications.
  • Applicable in load switching circuits.

FDMS86102LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS86102LZ?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the FDMS86102LZ?

The continuous drain current is 7A at ambient temperature (Ta) and 22A at case temperature (Tc).

What is the maximum on-resistance of the FDMS86102LZ?

The maximum on-resistance (Rds On) is 25mOhm at 7A drain current and 10V gate-source voltage.

What is the operating temperature range of the FDMS86102LZ?

The operating junction temperature range is -55°C to 150°C.

What package is the FDMS86102LZ available in?

The FDMS86102LZ is available in an 8-PowerTDFN package with a supplier device package of 8-PQFN (5x6), designed for surface-mount mounting.

What is the maximum gate charge of the FDMS86102LZ?

The maximum gate charge (Qg) is 22nC at 10V gate-source voltage.

What is the maximum power dissipation of the FDMS86102LZ?

The maximum power dissipation is 2.5W at ambient temperature (Ta) and 69W at case temperature (Tc).

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