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FDMS86101E FDMS86101E is an N-Channel power MOSFET from On Semiconductor. It features a 100V drain-source voltage rating and a continuous drain current of 60A at case temperature.
Mfr Part #:

FDMS86101E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS86101E is an N-Channel power MOSFET from On Semiconductor. It features a 100V drain-source voltage rating and a continuous drain current of 60A at case temperature.
✓ Total Stock: 9,000 pcs
$ Price Range: $1.15

FDMS86101E Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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9,000 pcs
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FDMS86101E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS86101E Description

Short technical summary and product information.

The FDMS86101E is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion applications.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 100 V and a continuous drain current rating of 60 A at Tc=25°C. The device features a low maximum on-resistance of 8 mOhm at Vgs=10V and Id=13A. Gate charge is 55 nC maximum at Vgs=10V, and input capacitance is 3000 pF maximum at Vds=50V. The threshold voltage is 4V maximum at Id=250µA.

 

The FDMS86101E is housed in a surface mount 8-PowerTDFN package, with a supplier device package of 8-PQFN (5x6). It is rated for operation over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 104W at Tc=25°C.

FDMS86101E Quick Information

Product Type: MOSFET
Canonical Name: FDMS86101E N-Channel Power MOSFET
Subcategory: Single MOSFET

FDMS86101E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS86101E Estimated Pricing

Qty Low High
500+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86101E Features

  • N-Channel power MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 60A at case temperature.
  • Low on-resistance of 8 mOhm maximum at 10V gate drive.
  • Surface mount 8-PQFN (5x6) package for compact designs.
  • Wide operating junction temperature range of -55°C to 150°C.

FDMS86101E Applications

  • Suitable for high-efficiency DC-DC converter circuits.
  • Used in power management for computing and telecom systems.
  • Ideal for motor control and load switching applications.
  • Applicable in battery protection and power distribution.

FDMS86101E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS86101E?

The drain-source voltage (Vdss) is 100 V.

What is the maximum continuous drain current for the FDMS86101E?

The continuous drain current is 12.4 A at ambient temperature (Ta=25°C) and 60 A at case temperature (Tc=25°C).

What is the on-resistance of the FDMS86101E?

The maximum on-resistance (Rds On) is 8 mOhm at Id=13A and Vgs=10V.

What package does the FDMS86101E come in?

The FDMS86101E is supplied in a surface mount 8-PowerTDFN package, also known as 8-PQFN (5x6).

What is the operating temperature range of the FDMS86101E?

The operating junction temperature range is -55°C to 150°C.

Is the FDMS86101E RoHS compliant?

The FDMS86101E is listed as RoHS3 Compliant.

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