FDMS8570S FDMS8570S is an N-Channel Power MOSFET from On Semiconductor. It features a 25V drain-source voltage, 60A continuous drain current, and low 2.8mOhm on-resistance.
Mfr Part #:

FDMS8570S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS8570S is an N-Channel Power MOSFET from On Semiconductor. It features a 25V drain-source voltage, 60A continuous drain current, and low 2.8mOhm on-resistance.
✓ Total Stock: 5 pcs
$ Price Range: $0.81

FDMS8570S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5 pcs
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FDMS8570S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS8570S Description

Short technical summary and product information.

The FDMS8570S is an N-Channel power MOSFET from On Semiconductor, utilizing MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications. The device has a drain-source voltage rating of 25V and can handle a continuous drain current of 60A at a case temperature of 25°C (Tc) or 24A at ambient temperature (Ta). The maximum on-resistance is 2.8 mOhm at a drain current of 24A and gate drive of 10V. The gate threshold voltage is 2.2V maximum at 1mA drain current. The gate charge is 425 nC at 10V, and the input capacitance is 2825 pF at 13V drain-source voltage. The device operates over a junction temperature range of -55°C to 150°C and is mounted using surface mount technology. It is available in an 8-PowerTDFN package, also known as the 8-PQFN (5x6) supplier device package.

FDMS8570S Quick Information

Product Type: MOSFET
Canonical Name: FDMS8570S N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDMS8570S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: Non-Compliant

FDMS8570S Estimated Pricing

Qty Low High
372+ $0.81 $0.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8570S Features

  • N-Channel MOSFET with 25V drain-source voltage.
  • 60A continuous drain current at 25°C case temperature.
  • Low 2.8 mOhm on-resistance at 10V gate drive.
  • Surface mount 8-PQFN (5x6) package.
  • Operating temperature range -55°C to 150°C.

FDMS8570S Applications

  • Ideal for high-efficiency power switching circuits.
  • Used in DC-DC converters and power supplies.
  • Suitable for battery management and load switching.

FDMS8570S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS8570S?

The drain-source voltage rating is 25V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at case temperature 25°C (Tc), or 24A at ambient temperature 25°C (Ta).

What is the on-resistance of the FDMS8570S?

The maximum on-resistance is 2.8 mOhm at 24A drain current and 10V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FDMS8570S available in?

It is available in an 8-PowerTDFN package, also known as the 8-PQFN (5x6) supplier device package.

Is the FDMS8570S RoHS compliant?

The database indicates RoHS3 compliant, but this status is unverified.

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