FDMS8558S The FDMS8558S is an N-Channel MOSFET from ON Semiconductor. It features a 25V drain-source voltage, 33A continuous drain current, and ultra-low 1.5 mΩ on-resistance.
Mfr Part #:

FDMS8558S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS8558S is an N-Channel MOSFET from ON Semiconductor. It features a 25V drain-source voltage, 33A continuous drain current, and ultra-low 1.5 mΩ on-resistance.
✓ Total Stock: 8,693 pcs
$ Price Range: $0.33

FDMS8558S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,379 pcs
5379 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,314 pcs
3314 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS8558S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS8558S Description

Short technical summary and product information.

The FDMS8558S is an N-Channel Power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring low on-resistance and high current capability. The device features a maximum drain-source voltage of 25V and can handle continuous drain currents of 33A at 25°C ambient temperature (90A at case temperature). The typical on-resistance is an ultra-low 1.5 mΩ at 10V gate drive, minimizing conduction losses. The gate threshold voltage is 2.2V maximum, allowing logic-level drive. The total gate charge is 81 nC, and input capacitance is 5118 pF, enabling fast switching. The MOSFET is housed in an 8-PowerTDFN package (8-PQFN 5x6mm) for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1. This combination of low resistance, high current, and compact package makes it suitable for DC-DC converters, load switches, and battery protection circuits.

FDMS8558S Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench SyncFET
Canonical Name: FDMS8558S N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDMS8558S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDMS8558S Estimated Pricing

Qty Low High
1+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8558S Features

  • Ultra-low 1.5 mΩ on-resistance at 10V gate drive.
  • High continuous drain current of 33A at 25°C.
  • Surface mount 8-PowerTDFN package for compact design.
  • Wide operating temperature range from -55°C to 150°C.
  • RoHS3 compliant and MSL level 1.

FDMS8558S Applications

  • Ideal for DC-DC converter power stages.
  • Used in load switch and hot-swap circuits.
  • Suitable for battery protection in portable devices.
  • Applicable in synchronous rectification for high efficiency.

FDMS8558S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the FDMS8558S?

The junction temperature range is -55°C to 150°C.

What package does the FDMS8558S come in?

It comes in an 8-PowerTDFN package (8-PQFN 5x6mm) for surface mount.

Is the FDMS8558S RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this is unverified.

What is the maximum drain-source voltage?

The maximum drain-source voltage is 25V.

What is the continuous drain current rating?

33A at 25°C ambient temperature and 90A at case temperature.

What is the on-resistance of the FDMS8558S?

Maximum 1.5 mΩ at 33A drain current and 10V gate drive.

What is the gate threshold voltage?

Maximum 2.2V at 1mA drain current.

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