| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328 pcs
|
328 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS8350L is an N-Channel Power MOSFET manufactured by ON Semiconductor. This device is designed for high-current switching applications requiring low conduction losses.
Key electrical characteristics include a maximum drain-source voltage of 40V, continuous drain current of 47A at ambient temperature and 290A at case temperature. The typical on-resistance is a maximum of 0.85mOhm at 47A and 10V gate drive, enabling high efficiency in power conversion circuits. Gate charge is 242nC at 10V, and input capacitance is 17500pF at 20V Vds.
The device is housed in a surface mount 8-PowerTDFN package (Power56) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.7W at ambient and 113W at case temperature. Recommended gate drive voltages are 4.5V and 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.39 | $1.39 |
| 10+ | $1.39 | $1.39 |
| 100+ | $1.39 | $1.39 |
| 1,000+ | $1.39 | $1.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
47A at ambient temperature and 290A at case temperature.
Maximum 0.85mOhm at 47A drain current and 10V gate drive.
8-PowerTDFN surface mount package (Power56).
-55°C to 150°C junction temperature.
Maximum 242nC at 10V gate-source voltage.
Yes, it is marked as RoHS3 Compliant.