FDMS8320LDC N-Channel Power MOSFET with 40V drain-source voltage and 192A continuous drain current. Low on-resistance of 1.1mΩ at 10V gate drive.
Mfr Part #:

FDMS8320LDC

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET with 40V drain-source voltage and 192A continuous drain current. Low on-resistance of 1.1mΩ at 10V gate drive.
✓ Total Stock: 1,000 pcs
$ Price Range: $1.22 - $3.68

FDMS8320LDC Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS8320LDC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS8320LDC Description

Short technical summary and product information.

The FDMS8320LDC is an N-Channel Power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 40V and a continuous drain current of 192A at TC=25°C, with a pulsed drain current rating of 300A. The device achieves a low typical on-resistance of 0.8mΩ at VGS=10V and ID=44A, with a maximum of 1.1mΩ, making it suitable for applications requiring minimal conduction losses.

 

This MOSFET utilizes advanced PowerTrench technology and is housed in a DFN8 Dual Cool package, which provides excellent thermal performance. The gate-to-source threshold voltage ranges from 1.0V to 3.0V, and the device supports gate drive voltages of 4.5V and 10V. With an input capacitance of 8310pF typical, it is optimized for switching applications.

 

Key applications include ORing FET/load switching, synchronous rectification, and DC-DC conversion. The device is Pb-free, halogen-free, and RoHS compliant, and is 100% UIL tested for reliability. It operates over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 125W at TC=25°C.

FDMS8320LDC Quick Information

Product Type: Power MOSFET
Series: FDMS8320LDC
Canonical Name: N-Channel Power MOSFET, 40V, 192A, 1.1mΩ, DFN8
Subcategory: Single N-Channel MOSFET

FDMS8320LDC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: Yes

FDMS8320LDC Estimated Pricing

Qty Low High
1+ $3.68 $3.68
10+ $2.40 $2.40
100+ $1.68 $1.68
500+ $1.41 $1.41
1,000+ $1.31 $1.31
3,000+ $1.22 $1.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8320LDC Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current rated at 192A.
  • Low on-resistance of 1.1mΩ maximum.
  • Pb-free, halogen-free, RoHS compliant.
  • DFN8 Dual Cool package for thermal performance.

FDMS8320LDC Applications

  • Ideal for ORing FET and load switching.
  • Used in synchronous rectification circuits.
  • Suitable for DC-DC conversion applications.

FDMS8320LDC FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS8320LDC?

The maximum drain-to-source voltage is 40V.

What is the continuous drain current rating at TC=25°C?

The continuous drain current is 192A at TC=25°C.

What is the maximum on-resistance at VGS=10V?

The maximum on-resistance is 1.1mΩ at VGS=10V and ID=44A.

What is the gate-to-source threshold voltage range?

The gate-to-source threshold voltage ranges from 1.0V to 3.0V.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20V.

What is the input capacitance of this MOSFET?

The input capacitance is 8310pF typical at VDS=20V.

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