| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,520 pcs
|
19520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS8320L is an N-Channel Power MOSFET from On Semiconductor, designed for high-efficiency power conversion applications. It features a drain-source breakdown voltage of 40V and a continuous drain current rating of 100A at case temperature (Tc=25°C) or 36A at ambient temperature (Ta=25°C). The device offers a low on-resistance of 1.1 mOhm maximum at 32A drain current and 10V gate drive, enabling reduced conduction losses.
The MOSFET has a maximum gate charge of 170 nC at 10V and an input capacitance of 11110 pF at 20V drain-source voltage, indicating moderate switching performance suitable for medium-frequency applications. The gate threshold voltage is 3V maximum at 250µA drain current, and the recommended gate drive voltage range is 4.5V to 10V for optimal Rds(on). Maximum gate-source voltage is ±20V.
The device is housed in an 8-PowerTDFN package with a supplier device package of 8-PQFN (5x6), designed for surface mount assembly. It can dissipate up to 104W at case temperature (Tc=25°C) and operates over a junction temperature range of -55°C to 150°C. The package is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.33 | $2.33 |
| 10+ | $2.24 | $2.24 |
| 100+ | $1.71 | $1.71 |
| 500+ | $1.53 | $1.53 |
| 1,000+ | $1.42 | $1.42 |
| 3,000+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The device is available in an 8-PowerTDFN package, also referred to as 8-PQFN (5x6).
The junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, though this is unverified.
The maximum on-resistance is 1.1 mOhm at 32A drain current and 10V gate drive.
The maximum gate charge is 170 nC at 10V gate-source voltage.
The continuous drain current is 36A at ambient temperature (Ta=25°C) and 100A at case temperature (Tc=25°C).