| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDMS8027S is an N-Channel power MOSFET from ON Semiconductor designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vdss) of 30V, with continuous drain current ratings of 18A at ambient temperature (Ta) and 22A at case temperature (Tc). The device achieves a low on-resistance of 5mOhm (maximum) at a gate drive of 10V and 18A drain current, enabling low conduction losses in switching circuits.
The MOSFET is characterized by a gate charge of 31nC at 10V and an input capacitance of 1815pF at 15V Vds, making it suitable for high-frequency switching. The gate threshold voltage is 3V maximum at 1mA drain current, and the allowable gate-source voltage range is ±20V. Power dissipation is rated at 2.5W at ambient and 36W at case temperature.
The device is housed in a surface-mount 8-PowerTDFN (8-PQFN 5x6) package, offering a compact footprint for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C, ensuring reliability in harsh environments. Typical applications include DC-DC converters, load switches, and power management in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
| 10+ | $0.78 | $0.78 |
| 100+ | $0.51 | $0.51 |
| 500+ | $0.40 | $0.40 |
| 1,000+ | $0.36 | $0.36 |
| 3,000+ | $0.29 | $0.29 |
| 6,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The device is available in an 8-PowerTDFN package, also known as 8-PQFN (5x6).
The junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum drain-source on-resistance is 5mOhm at 18A drain current and 10V gate drive.
The maximum gate charge is 31nC at 10V gate-source voltage.
The maximum continuous drain current is 18A at ambient temperature and 22A at case temperature.