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FDMS8025S FDMS8025S is a N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 24A/49A drain current in an 8-PowerTDFN package.
Mfr Part #:

FDMS8025S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS8025S is a N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 24A/49A drain current in an 8-PowerTDFN package.
✓ Total Stock: 96,000 pcs
$ Price Range: $0.50 - $2.07

FDMS8025S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
81,000 pcs
On Request
81000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
15,000 pcs
On Request
15000 pcs On Request 1 On Request On Request 20+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMS8025S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS8025S Description

Short technical summary and product information.

The FDMS8025S is a single N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 24A at ambient temperature (Ta) and 49A at case temperature (Tc). The device has a low on-state resistance of 2.8mΩ at 24A and 10V gate drive. It is offered in the 8-PowerTDFN package (8-PQFN 5x6) for surface mount assembly. The MOSFET operates over a junction temperature range of -55°C to 150°C. It is suitable for switching and power conversion circuits.

FDMS8025S Quick Information

Product Type: MOSFET
Series: PowerTrench SyncFET
Canonical Name: FDMS8025S N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDMS8025S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS8025S Estimated Pricing

Qty Low High
1+ $2.07 $2.07
10+ $1.32 $1.32
50+ $0.99 $0.99
100+ $0.89 $0.89
500+ $0.70 $0.70
3,000+ $0.52 $0.52
6,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8025S Features

  • N-Channel MOSFET for power management.
  • 30V maximum drain-source voltage.
  • Low on-resistance of 2.8mΩ.
  • Surface mount 8-PowerTDFN package.
  • Support 24A/49A continuous drain current.

FDMS8025S Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Can be used in motor control circuits.

FDMS8025S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FDMS8025S?

The FDMS8025S is offered in an 8-PowerTDFN package (8-PQFN 5x6).

What is the operating temperature range of the FDMS8025S?

The operating junction temperature range is -55°C to 150°C.

Is the FDMS8025S RoHS compliant?

The device is listed as RoHS3 Compliant, but this is unverified and low confidence.

What is the maximum drain-source voltage of the FDMS8025S?

The maximum drain-source voltage is 30V.

What is the maximum drain current of the FDMS8025S?

The maximum drain current is 24A at ambient temperature and 49A at case temperature.

What is the typical gate charge of the FDMS8025S?

The maximum gate charge is 47nC at 10V gate-source voltage.

What is the on-state resistance of the FDMS8025S?

The maximum drain-source on-state resistance is 2.8mΩ at 24A and 10V gate drive.

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