| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,222 pcs
|
1222 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS8023S is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage rating of 30V and continuous drain current of 26A at ambient temperature and 49A at case temperature.
Key electrical characteristics include a maximum on-resistance of 2.4mΩ at 26A and 10V gate drive, total gate charge of 57nC, and input capacitance of 3550pF. The gate threshold voltage is 3V maximum at 1mA drain current.
The device is designed for surface mount assembly in an 8-PowerTDFN package, also known as 8-PQFN (5x6). It supports a maximum power dissipation of 2.5W at ambient and 59W at case temperature, with an operating junction temperature range of -55°C to 150°C.
This MOSFET is suitable for power management and switching applications requiring low on-resistance and high efficiency. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction temperature)
8-PowerTDFN (also known as 8-PQFN 5x6)
RoHS3 Compliant (unverified)
30V
26A at ambient temperature, 49A at case temperature
2.4mΩ maximum at 26A and 10V gate drive
57nC at 10V gate-source voltage