| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
105,000 pcs
|
105000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS8020 is an N-Channel MOSFET from ON Semiconductor, designed for low-voltage power switching applications. It features a drain-source voltage rating of 30V and continuous drain current of 26A at ambient temperature and 42A at case temperature.
Electrical characteristics include a maximum on-resistance of 2.5mOhm at 10V gate drive, gate charge of 61nC, and input capacitance of 3800pF. The threshold voltage is 3V maximum at 250µA drain current. The device can dissipate up to 2.5W at ambient and 65W at case temperature.
The FDMS8020 is housed in a surface mount 8-PowerTDFN package, also known as 8-PQFN (5x6). It operates over a junction temperature range of -55°C to 150°C. This MOSFET is suitable for general purpose power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.32 | $2.32 |
| 10+ | $1.46 | $1.46 |
| 100+ | $0.96 | $0.96 |
| 500+ | $0.76 | $0.76 |
| 1,000+ | $0.68 | $0.68 |
| 3,000+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction).
8-PowerTDFN (8-PQFN 5x6) surface mount package.
RoHS3 compliant (unverified).
30V.
26A at ambient temperature, 42A at case temperature.
2.5mOhm maximum at 26A drain current and 10V gate drive.
61nC maximum at 10V gate-source voltage.