| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,507 pcs
|
24507 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,837 pcs
|
2837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS7681 is a high-performance N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power management applications, offering a drain-source voltage (Vdss) of 30V and a low on-resistance (Rds(on)) of 6.9mOhm at a drain current (Id) of 14A and gate-source voltage (Vgs) of 10V.
Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage of ±20V. The MOSFET features a maximum continuous drain current of 14A at 25°C ambient temperature and 28A at 25°C case temperature. Its input capacitance (Ciss) is 1850 pF at 15V, and gate charge (Qg) is 28 nC at 10V.
This device operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-PQFN (4.9x5.8) package, designed for surface mounting. The maximum power dissipation is 2.5W at ambient temperature and 33W at case temperature, making it suitable for various power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The FDMS7681 comes in an 8-PQFN (4.9x5.8mm) package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 3V at 250µA drain current.
The maximum on-resistance is 6.9mOhm at 14A drain current and 10V gate drive.
The maximum total gate charge is 28 nC at 10V gate voltage.
The maximum input capacitance is 1850 pF at 15V drain-source voltage.