| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,015 pcs
|
1015 pcs | On Request | 1 | On Request | On Request | 16+17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS7672AS is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring low on-resistance and fast switching.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V, continuous drain current of 19A at 25°C ambient temperature (Ta) and 42A at 25°C case temperature (Tc). The device features a very low maximum on-resistance (Rds(on)) of 4 mOhm at Vgs=10V and Id=18A. Gate charge (Qg) is 46 nC maximum at Vgs=10V, and input capacitance (Ciss) is 2820 pF maximum at Vds=15V.
The MOSFET is housed in a surface-mount 8-PowerTDFN package (8-PQFN, 5x6mm) and is rated for operation over a junction temperature range of -55°C to +150°C. Maximum power dissipation is 2.5W at 25°C ambient and 46W at 25°C case temperature.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 19A at 25°C ambient temperature and 42A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 4 mOhm at Vgs=10V and Id=18A.
The FDMS7672AS is available in an 8-PowerTDFN package, also known as 8-PQFN (5x6mm), for surface-mount assembly.
The operating junction temperature range is -55°C to +150°C.
The FDMS7672AS is listed as RoHS3 compliant, though this is unverified.