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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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57,785 pcs
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57785 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,680 pcs
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5680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,415 pcs
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5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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495 pcs
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495 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current (Maximum @ T_C = 100 °C) | |
| Drain Current (Maximum @ T_c=25 °C) | |
| Drain Current (Maximum @ pulsed) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ V_GS = 7 V, I_D = 26 A) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Leakage Current, Forward | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ T_C = +25 °C) | |
| Quantity Per Reel | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Single Pulse Avalanche Energy | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The FDMS7658AS is an N-Channel PowerTrench SyncFET MOSFET from On Semiconductor, designed for high-efficiency power conversion applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 176A at 25°C case temperature, with a pulsed drain current rating of 670A. The device achieves a low maximum on-resistance of 1.9mΩ at VGS=10V and ID=28A, and 2.2mΩ at VGS=7V and ID=26A, minimizing conduction losses in synchronous rectification circuits.
The FDMS7658AS integrates a monolithic Schottky body diode (SyncFET technology) to improve efficiency in low-side switching applications. It offers a maximum gate threshold voltage of 3V at ID=1mA and supports gate drive voltages of 4.5V and 10V. The device is 100% UIL tested and features a robust MSL1 package design.
This MOSFET is housed in an 8-PowerTDFN surface-mount package (8-PQFN 5x6mm) and is suitable for synchronous rectifiers in DC/DC converters, notebook Vcore/GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification. It operates over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 89W at 25°C case temperature.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 176A at TC=25°C.
The maximum on-resistance is 1.9mΩ at VGS=10V and ID=28A.
The operating junction temperature range is -55°C to +150°C.
The FDMS7658AS is available in an 8-PowerTDFN surface-mount package (8-PQFN 5x6mm).
The FDMS7658AS is marked as RoHS compliant, but this status is unverified and should be confirmed with manufacturer documentation.
The maximum gate threshold voltage is 3V at ID=1mA (VDS=VGS).