| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
42,000 pcs
|
42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,436 pcs
|
3436 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS7620S is a dual N-channel MOSFET from On Semiconductor, configured as two independent N-channel MOSFETs in a single Power56 package. It features a logic-level gate, allowing direct drive from low-voltage logic.
Key electrical specifications include a drain-source voltage (Vds) of 30V, continuous drain current ratings of 10.1A and 12.4A (per channel), and a maximum on-resistance (Rds(on)) of 20mOhm at Vgs=10V and Id=10.1A. The device has a maximum gate charge of 11nC at Vgs=10V and an input capacitance of 608pF at Vds=15V.
The MOSFET is housed in an 8-PowerWDFN surface-mount package (Power56), suitable for compact PCB layouts. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. The logic-level gate feature simplifies drive circuitry in battery-powered or low-voltage applications.
This dual MOSFET array is ideal for power management, load switching, and DC-DC converter applications where space is limited and two independent MOSFETs are required. The surface-mount package enables automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.17 | $2.17 |
| 10+ | $1.39 | $1.39 |
| 100+ | $0.94 | $0.94 |
| 500+ | $0.74 | $0.74 |
| 1,000+ | $0.68 | $0.68 |
| 3,000+ | $0.62 | $0.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The device is available in an 8-PowerWDFN surface-mount package, also known as Power56.
The junction temperature range is -55°C to 150°C.
The part is marked as RoHS3 compliant, but this status is unverified.
The maximum drain-source on-resistance is 20mOhm at Vgs=10V and Id=10.1A.
The maximum gate charge is 11nC at Vgs=10V.
The continuous drain current is 10.1A and 12.4A (per channel, conditions unspecified).