| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS7602S is a dual N-Channel power MOSFET from ON Semiconductor designed for medium-power switching applications.
Key electrical characteristics include a maximum drain-source voltage of 30V, per-channel drain current ratings of 12A and 17A, and a maximum on-resistance of just 7.5mOhm at 10V gate drive. The device features a logic-level gate threshold (maximum 3V at 250µA) enabling direct drive from low-voltage logic. Gate charge is 28nC maximum at 10V, and input capacitance is 1750pF at 15V drain-source voltage.
The MOSFET is built with metal-oxide semiconductor technology and is supplied in an 8-PowerWDFN package (Supplier Device Package: Power56) for surface-mount assembly. It operates across a junction temperature range of -55°C to 150°C and has a power dissipation rating of 1W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.20 | $2.20 |
| 10+ | $1.41 | $1.41 |
| 100+ | $0.97 | $0.97 |
| 500+ | $0.78 | $0.78 |
| 1,000+ | $0.71 | $0.71 |
| 3,000+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDMS7602S has a maximum drain-to-source voltage (Vdss) of 30 V.
The drain current is rated at 12A and 17A per channel for this dual MOSFET.
The maximum on-resistance is 7.5 mOhm at a drain current of 12A and gate voltage of 10V.
It is supplied in an 8-PowerWDFN surface-mount package with the supplier device package designation Power56.
The device operates over a junction temperature range of -55°C to 150°C.
Yes, it features a logic-level gate, with a maximum gate threshold voltage of 3V at 250µA drain current.