FDMS7580

The FDMS7580 is an N-Channel MOSFET manufactured by ON Semiconductor, designed for power switching applications. It is rated for a maximum drain-to-source voltage of 25V and supports continuous drain currents of 15A at ambient temperature (Ta) and 29A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 7.5mOhm at a gate-to-source voltage of 10V with a drain current of 15A, enabling efficient low-voltage power conversion. The gate is specified to handle up to plus/minus 20V, with a maximum gate threshold voltage of 3V at 250uA. The total gate charge is 20nC at Vgs=10V, and input capacitance is 1190pF at Vds=13V.

The MOSFET is housed in an 8-PowerTDFN (also referred to as 8-PQFN 5mm x 6mm) surface-mount package, supporting compact PCB designs. Maximum power dissipation is 2.5W at ambient temperature and 27W at case temperature. The device operates over a junction temperature range of -55C to 150C, suitable for industrial and automotive environments where thermal cycling is a consideration. The package is designed for efficient heat transfer to the PCB. Mounting is surface-mount technology (SMT), typically used in automated assembly processes.

This N-Channel MOSFET is suitable for load switching, DC-DC conversion, and other low-voltage power management functions. Its low gate drive voltage requirements (4.5V for maximum Rds(on), 10V for minimum Rds(on)) allow flexible interface with logic-level or standard gate drivers. The device incorporates metal-oxide semiconductor (MOSFET) technology, providing fast switching performance. The 8-PowerTDFN package provides a balanced thermal and electrical performance profile for moderate-power applications.