| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,040 pcs
|
4040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,668 pcs
|
2668 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This FDMS7572S is an N-Channel power MOSFET manufactured by On Semiconductor. It uses a MOSFET (Metal Oxide) technology and is designed for low-voltage, high-current switching applications. The device is rated for a drain-to-source voltage of 25 V and continuous drain currents of 23 A at ambient temperature and 49 A at case temperature.
With a maximum on-resistance of 2.9 mΩ at 23 A and 10 V gate drive, the FDMS7572S provides efficient conduction and low power loss. The total gate charge is 45 nC at 10 V, and the input capacitance is 2780 pF at 13 V. Recommended drive voltages are 4.5 V and 10 V, and the maximum gate threshold voltage is 3 V at 1 mA.
The device supports a maximum power dissipation of 2.5 W at ambient temperature and 46 W at case temperature, with an operating junction temperature range of -55°C to 150°C. It is packaged in an 8-PowerTDFN (supplier device package 8-PQFN 5x6) for surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.77 | $2.77 |
| 10+ | $0.89 | $0.89 |
| 3,000+ | $0.76 | $0.76 |
| 9,000+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 25 V.
It comes in an 8-PowerTDFN package, also known as 8-PQFN (5x6).
The junction temperature range is -55°C to 150°C.
Yes, listed as RoHS3 compliant in existing data, though unverified.
It is rated for 23 A at ambient temperature and 49 A at case temperature.
The maximum Rds(on) is 2.9 mΩ at 23 A and 10 V gate drive.
The maximum total gate charge is 45 nC at a 10 V gate-source voltage.