| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,321 pcs
|
12321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,273 pcs
|
3273 pcs | On Request | 1 | On Request | On Request | 1748+ | On Request | On Request | |
|
220 pcs
|
220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS7570S is an N-Channel power MOSFET from ON Semiconductor, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 25V and continuous drain current ratings of 28A at ambient temperature and 49A at case temperature. The device offers a low maximum on-resistance of 1.95mOhm at 28A and 10V gate drive, enabling low conduction losses. Gate charge is 69nC at 10V, and input capacitance is 4515pF at 13V drain-source voltage. The MOSFET is housed in an 8-PowerTDFN package (8-PQFN 5x6mm) for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C. Typical applications include DC-DC converters, load switches, and power management in computing and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 398+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
8-PowerTDFN (8-PQFN 5x6mm).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
28A at ambient temperature, 49A at case temperature.
Maximum gate charge is 69nC at 10V.
Maximum on-resistance is 1.95mOhm at 28A and 10V gate drive.