| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
568,910 pcs
|
568910 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor is designed for low-voltage, high-current switching applications. It features a drain-source breakdown voltage of 25V and continuous drain current ratings of 35A at ambient temperature (Ta=25°C) and 49A at case temperature (Tc=25°C). The on-resistance is a low 1.2mOhm maximum at Vgs=10V and Id=35A, enabling efficient power handling.
The device has a maximum gate threshold voltage of 3V at Id=1mA and a total gate charge of 133nC at Vgs=10V. Input capacitance is 8965pF at Vds=13V. Power dissipation is rated at 96W at case temperature and 2.5W at ambient temperature. The operating junction temperature range is -55°C to 150°C.
The MOSFET is surface mount packaged in an 8-PowerTDFN case, also referred to as 8-PQFN (5x6). This compact package is suitable for space-constrained designs requiring high current capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.73 | $3.73 |
| 10+ | $2.44 | $2.44 |
| 100+ | $1.78 | $1.78 |
| 500+ | $1.46 | $1.46 |
| 1,000+ | $1.42 | $1.42 |
| 3,000+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
35A at ambient temperature (Ta=25°C) and 49A at case temperature (Tc=25°C).
1.2mOhm maximum at Vgs=10V, Id=35A.
-55°C to 150°C (junction temperature).
8-PowerTDFN (8-PQFN 5x6).
RoHS3 compliant (unverified).
133nC maximum at Vgs=10V.