| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
116,251 pcs
|
116251 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,949 pcs
|
1949 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,311 pcs
|
1311 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS6681Z is a P-Channel PowerTrench MOSFET designed by onsemi for low-loss load switch applications. It combines advanced silicon and package technologies to achieve a maximum on-resistance of 3.2mOhm at Vgs=-10V and Id=-21.1A, and 5.0mOhm at Vgs=-4.5V and Id=-15.7A. The device is rated for a drain-source voltage of -30V and a continuous drain current of -122A at Tc=25°C (package limited).
Key electrical characteristics include a gate threshold voltage range of -1V to -3V at Id=-250µA, a maximum gate charge of 241nC at Vgs=10V, and an input capacitance of 10380pF at Vds=15V. The device offers HBM ESD protection of 8kV typical. Thermal performance is supported by a junction-to-case thermal resistance of 1.7°C/W and a junction-to-ambient thermal resistance of 50°C/W.
The FDMS6681Z is housed in an 8-PowerTDFN package (Power 56, CASE 483AE) with a 5x6mm footprint, designed for surface mount assembly. It is RoHS3 compliant and rated MSL1 for robust package design. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 911+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -30V.
The maximum continuous drain current at Tc=25°C is -122A.
The maximum on-resistance (Rds(on)) at Vgs=-10V and Id=-21.1A is 3.2mOhm.
The FDMS6681Z is housed in an 8-PowerTDFN package (Power 56, CASE 483AE), also known as 8-PQFN (5x6).
Yes, the FDMS6681Z is RoHS3 compliant as stated in the datasheet.
The operating junction temperature range is -55°C to +150°C.
The gate threshold voltage (Vgs(th)) is -1V minimum, -1.7V typical, and -3V maximum at Id=-250µA.