FDMS5362L-F085 FDMS5362L-F085 is an N-Channel power MOSFET from On Semiconductor, rated at 60V drain-source voltage and 17.6A continuous current. It features low on-resistance (33mΩ max) in an 8-PowerVDFN surface-mount package.
Mfr Part #:

FDMS5362L-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS5362L-F085 is an N-Channel power MOSFET from On Semiconductor, rated at 60V drain-source voltage and 17.6A continuous current. It features low on-resistance (33mΩ max) in an 8-PowerVDFN surface-mount package.
✓ Total Stock: 40,000 pcs

FDMS5362L-F085 Available from 1 distributor

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✓ Non-Authorised
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40,000 pcs
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FDMS5362L-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS5362L-F085 Description

Short technical summary and product information.

The FDMS5362L-F085 is an N-channel metal-oxide semiconductor field-effect transistor (MOSFET) designed for power switching applications. It is rated for a drain-to-source voltage of 60V and a continuous drain current of 17.6A, making it suitable for a range of power conversion and load switching circuits.

 

The device has a maximum on-resistance of 33mΩ at VGS=10V and ID=17.6A, with a typical value of 26mΩ. It offers a gate charge of 21nC and input capacitance of 878pF, supporting efficient high-frequency switching. The maximum power dissipation is 41.7W at case temperature.

 

The FDMS5362L-F085 comes in an 8-PowerVDFN (Power56) surface-mount package, allowing compact PCB layouts. It operates over a junction temperature range of -55°C to +175°C, enabling use in demanding thermal environments.

FDMS5362L-F085 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Power MOSFET 60V 17.6A Power56
Subcategory: Transistors - FETs, MOSFETs - Single

FDMS5362L-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS5362L-F085 Features

  • N-channel MOSFET with 60V drain-source rating.
  • Continuous drain current rating of 17.6A.
  • Low on-resistance: 33mΩ max at 10V.
  • Surface-mount Power56 package for compact design.
  • Operating temperature from -55°C to 175°C.

FDMS5362L-F085 Applications

  • Suitable for power switching in DC-DC converters.
  • Useful as high-side or low-side switch.
  • Fits power management and supply circuits.

FDMS5362L-F085 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the FDMS5362L-F085?

The drain-source voltage rating is 60V.

What is the continuous drain current rating?

The continuous drain current is 17.6A at case temperature (Tc).

What is the maximum on-resistance (Rds(on))?

Rds(on) is 33mΩ maximum at VGS = 10V and ID = 17.6A.

What package is the FDMS5362L-F085 available in?

It is available in an 8-PowerVDFN package, also known as the Power56 supplier device package, for surface-mount mounting.

What is the operating junction temperature range?

The operating temperature range is -55°C to +175°C.

Is the FDMS5362L-F085 RoHS compliant?

The part is listed as RoHS3 compliant, but this compliance status is currently unverified.

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