FDMS4D4N08C The FDMS4D4N08C is an N-Channel MOSFET from onsemi with 80V drain-source voltage and 123A continuous drain current. It features a low on-resistance of 4.3mΩ at 10V gate drive and comes in a surface-mount 8-PowerTDFN package.
Mfr Part #:

FDMS4D4N08C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS4D4N08C is an N-Channel MOSFET from onsemi with 80V drain-source voltage and 123A continuous drain current. It features a low on-resistance of 4.3mΩ at 10V gate drive and comes in a surface-mount 8-PowerTDFN package.
✓ Total Stock: 9,333 pcs
$ Price Range: $1.36 - $3.88

FDMS4D4N08C Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,333 pcs
8333 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS4D4N08C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS4D4N08C Description

Short technical summary and product information.

The FDMS4D4N08C is an N-Channel MOSFET fabricated using onsemi's advanced POWERTRENCH process with Shielded Gate technology. This design minimizes on-state resistance while maintaining superior switching performance and a soft body diode. The device is rated for a maximum drain-source voltage of 80V and a maximum gate-source voltage of ±20V. Continuous drain current is 123A at case temperature 25°C, and power dissipation is rated at 125W.

 

Electrical characteristics include a maximum on-resistance of 4.3mΩ at VGS=10V and ID=44A, with a gate charge of 56nC at 10V. Input capacitance is 4090pF at 40V VDS, and the maximum threshold voltage is 4V at 250µA. The device is optimized for operation with 6V and 10V gate drives, supporting efficient power conversion in high-current applications.

 

The FDMS4D4N08C is housed in an 8-PowerTDFN (Power56) surface-mount package, measuring 5x6mm. It is RoHS3 compliant, lead-free, and halogen-free, with an MSL1 moisture sensitivity level for robust handling. Typical applications include primary DC-DC converters, synchronous rectifiers, motor drives, and solar power systems.

FDMS4D4N08C Quick Information

Product Type: Single N-Channel MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET Transistor, 80V, 123A, 8-PowerTDFN
Subcategory: Transistors - FETs, MOSFETs - Single

FDMS4D4N08C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS4D4N08C Estimated Pricing

Qty Low High
1+ $3.88 $3.88
10+ $2.54 $2.54
100+ $1.78 $1.78
500+ $1.46 $1.46
3,000+ $1.36 $1.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS4D4N08C Features

  • N-channel shielded gate MOSFET technology.
  • 80V drain-to-source voltage rating.
  • 123A continuous drain current at 25°C.
  • Low 4.3mΩ on-resistance at 10V.
  • Surface-mount 8-PowerTDFN package.

FDMS4D4N08C Applications

  • Primary DC-DC converter switching.
  • Synchronous rectifier in power supplies.
  • Motor drive high-current switching.
  • Solar inverter power stages.

FDMS4D4N08C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS4D4N08C?

The maximum drain-source voltage (VDS) is 80V.

What package is the FDMS4D4N08C available in?

It is available in an 8-PowerTDFN surface-mount package, also known as 8-PQFN (5x6) Power56.

What is the operating temperature range of the FDMS4D4N08C?

The junction operating temperature range is -55°C to +150°C.

Is the FDMS4D4N08C RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, as verified by the datasheet.

What is the maximum continuous drain current of the FDMS4D4N08C?

The maximum continuous drain current is 123A at case temperature 25°C, derating to 78A at 100°C and 17A at ambient temperature.

What is the on-resistance of the FDMS4D4N08C at 10V gate drive?

The maximum on-resistance is 4.3mΩ at Vgs=10V and Id=44A.

What is the total gate charge of the FDMS4D4N08C?

The maximum gate charge is 56nC at Vgs=10V.

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