FDMS3D5N08LC The FDMS3D5N08LC is an N-Channel Power MOSFET from onsemi with 80V drain-source voltage and 136A continuous drain current. It features low Rds(on) of 3.5mOhm at 10V and is available in a surface-mount 8-PowerTDFN (8-PQFN 5x6) package.
Mfr Part #:

FDMS3D5N08LC

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS3D5N08LC is an N-Channel Power MOSFET from onsemi with 80V drain-source voltage and 136A continuous drain current. It features low Rds(on) of 3.5mOhm at 10V and is available in a surface-mount 8-PowerTDFN (8-PQFN 5x6) package.
✓ Total Stock: 3,000 pcs
$ Price Range: $1.56 - $4.71

FDMS3D5N08LC Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS3D5N08LC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Halogen Free
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Vgs(th) (Max) @ Id

FDMS3D5N08LC Description

Short technical summary and product information.

The FDMS3D5N08LC is an N-Channel Power MOSFET produced using onsemi's advanced POWERTRENCH process with Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a best-in-class soft body diode. The device is rated for 80V drain-source voltage (VDS) and can handle continuous drain current up to 136A at Tc=25°C (86A at Tc=100°C, 19A at Ta=25°C) with pulsed current capability of 745A. The maximum Rds(on) is 3.5mOhm at VGS=10V, ID=45A, and 5.1mOhm at VGS=4.5V, ID=36A. The gate threshold voltage is typically 2.5V maximum. The MOSFET is 100% UIL tested with a single pulse avalanche energy rating of 486mJ. Power dissipation is 125W at Tc=25°C and 2.5W at Ta=25°C. The device operates over a junction temperature range of -55°C to 150°C. It is housed in a compact 8-PowerTDFN (8-PQFN 5x6) surface-mount package, designed for excellent thermal performance (RθJC=1.0°C/W, RθJA=50°C/W). Typical applications include primary DC-DC converters, synchronous rectifiers, motor drives, and solar power systems. The part is RoHS3 compliant and MSL1 rated.

FDMS3D5N08LC Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Power MOSFET, 80V, 136A, 3.5mOhm, 8-PowerTDFN (8-PQFN 5x6)
Subcategory: Single MOSFETs

FDMS3D5N08LC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS3D5N08LC Estimated Pricing

Qty Low High
1+ $4.71 $4.71
10+ $3.11 $3.11
100+ $2.20 $2.20
500+ $1.89 $1.89
3,000+ $1.57 $1.57
6,000+ $1.56 $1.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS3D5N08LC Features

  • Shielded Gate MOSFET technology for low on-resistance.
  • Max Rds(on) 3.5 mOhm at 10V gate drive.
  • Continuous drain current 136A at 25°C case.
  • 100% UIL tested for avalanche ruggedness.
  • MSL1 package for robust reliability.

FDMS3D5N08LC Applications

  • Primary DC-DC converter MOSFET application.
  • Synchronous rectifier in DC-DC and AC-DC.
  • Motor drive and solar power systems.

FDMS3D5N08LC FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS3D5N08LC?

The drain to source voltage (VDS) is 80V.

What is the package type of the FDMS3D5N08LC?

It is available in an 8-PowerTDFN (8-PQFN 5x6) surface mount package.

What is the operating temperature range of the FDMS3D5N08LC?

The operating junction temperature range is -55°C to 150°C.

Is the FDMS3D5N08LC RoHS compliant?

Yes, it is RoHS3 compliant as verified by the datasheet.

What is the maximum continuous drain current?

At Tc=25°C, the continuous drain current is 136A; at Ta=25°C, it is 19A.

What is the on-resistance at 10V gate drive?

The maximum Rds(on) at VGS=10V, ID=45A is 3.5 mOhm.

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