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FDMS3686S FDMS3686S is a dual N-channel MOSFET with 30V drain-source voltage and 13A/23A drain current. It features low on-resistance of 8mΩ and is housed in a Power56 package.
Mfr Part #:

FDMS3686S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS3686S is a dual N-channel MOSFET with 30V drain-source voltage and 13A/23A drain current. It features low on-resistance of 8mΩ and is housed in a Power56 package.
Total Stock: 3,800 pcs

FDMS3686S Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,800 pcs
3800 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS3686S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (Id) (Maximum @ Channel 2)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMS3686S Description

Short technical summary and product information.

The FDMS3686S is a dual N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. It features an asymmetrical configuration with one channel rated at 13A and the other at 23A, both with a maximum drain-source voltage of 30V. The device offers a low maximum on-resistance of 8mΩ at 13A and 10V gate drive, minimizing conduction losses.

 

With a maximum input capacitance of 1785pF and a maximum gate charge of 29nC, the FDMS3686S provides fast switching performance suitable for high-frequency power conversion. The logic-level gate feature allows direct driving from low-voltage control signals, simplifying interface design. The device can dissipate up to 1W and operates over a junction temperature range of -55°C to 150°C.

 

Packaged in an 8-PowerTDFN (Power56) surface-mount package, the FDMS3686S is optimized for compact PCB layouts and efficient thermal management. This MOSFET array is suitable for a variety of applications including DC-DC converters, load switching, and power management circuits where space and efficiency are critical.

FDMS3686S Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: MOSFET 2N-CH 30V 13A/23A POWER56
Subcategory: Transistors - FETs, MOSFETs - Arrays

FDMS3686S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS3686S Features

  • Dual N-channel asymmetrical MOSFET array.
  • 30V maximum drain-source voltage rating.
  • Low 8mΩ on-resistance at 13A.
  • Logic-level gate for easy driving.
  • Surface-mount Power56 package.

FDMS3686S Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management systems.
  • Suitable for load switching applications.
  • Good for high-frequency switching designs.

FDMS3686S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS3686S?

The maximum drain-to-source voltage is 30V.

What is the maximum drain current for each channel?

Channel 1 is rated at 13A and Channel 2 at 23A.

What is the maximum on-resistance of the FDMS3686S?

The maximum on-resistance is 8mΩ at 13A and 10V gate drive.

What is the operating temperature range of the FDMS3686S?

The junction operating temperature range is -55°C to 150°C.

What is the package type of the FDMS3686S?

The package is 8-PowerTDFN with a supplier device package of Power56.

Is the FDMS3686S RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

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