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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
156,000 pcs
|
156000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,995 pcs
|
5995 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
3,319 pcs
|
3319 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
243 pcs
|
243 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Minimum @ Q 1) | |
| Avalanche Energy (Minimum @ Q 2) | |
| Configuration | |
| Current | |
| Drain Current - Continuous (@ Q 1, TA=25 °C) | |
| Drain Current - Continuous (@ Q 2, TA=25 °C) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (@ Q 2, TA=25 °C (Note 1 d) | |
| Rds On (Max) @ Id, Vgs | |
| Rds On - Max (Maximum @ Q 1, VGS=4.5 V, ID=10 A) | |
| Rds On - Max (Maximum @ Q 2, VGS=10 V, ID=18 A) | |
| Rds On - Max (Maximum @ Q 2, VGS=4.5 V, ID=17 A) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3669S is a dual N-Channel asymmetrical MOSFET array from On Semiconductor, designed for synchronous buck converter applications. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) in a single Power56 package, with the switch node internally connected for simplified layout.
Key electrical specifications include a drain-source voltage rating of 30V for both MOSFETs. Q1 offers a maximum continuous drain current of 13A at 25°C, with Rds(on) of 10 mOhm at VGS=10V and 14.5 mOhm at VGS=4.5V. Q2 provides 18A continuous current with Rds(on) of 5 mOhm at VGS=10V and 5.2 mOhm at VGS=4.5V. The device features logic level gate drive capability and low gate charge (24 nC total).
The MOSFETs are housed in an 8-PowerTDFN surface mount package (Power56), which offers low inductance for reduced switching losses. The operating junction temperature range is -55°C to 150°C. The device is RoHS compliant, Pb-Free, and Halide Free.
Typical applications include computing, communications, general purpose point-of-load converters, and notebook VCORE regulation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.77 | $2.77 |
| 10+ | $1.79 | $1.79 |
| 100+ | $1.23 | $1.23 |
| 500+ | $0.98 | $0.98 |
| 1,000+ | $0.81 | $0.81 |
| 3,000+ | $0.74 | $0.74 |
| 6,000+ | $0.74 | $0.74 |
| 9,000+ | $0.72 | $0.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V for both MOSFETs.
8-PowerTDFN (Power56) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS compliant, Pb-Free, and Halide Free.
Q1: 13A, Q2: 18A at TA=25°C.
Maximum 5 mOhm at VGS=10V, ID=18A.
Maximum 24 nC at VGS=10V.