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FDMS3660S-F121 The FDMS3660S-F121 is a PowerTrench Power Stage asymmetric dual N-channel MOSFET from On Semiconductor. It features a 30V drain-source voltage and continuous drain currents of 13A (Q1) and 30A (Q2) at 25°C ambient.
Mfr Part #:

FDMS3660S-F121

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS3660S-F121 is a PowerTrench Power Stage asymmetric dual N-channel MOSFET from On Semiconductor. It features a 30V drain-source voltage and continuous drain currents of 13A (Q1) and 30A (Q2) at 25°C ambient.
✓ Total Stock: 636,000 pcs

FDMS3660S-F121 Available from 1 distributor

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FDMS3660S-F121 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDMS3660S-F121 Description

Short technical summary and product information.

The FDMS3660S-F121 is an asymmetric dual N-channel MOSFET from On Semiconductor's PowerTrench Power Stage family. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) in a single package, designed for synchronous buck converter applications.

 

The device features a maximum drain-to-source voltage of 30V for both MOSFETs. Q1 has a maximum continuous drain current of 13A at 25°C ambient (package limited 30A at case temperature 25°C) and a maximum on-resistance of 8 mOhm at Vgs=10V. Q2 offers a higher current capability with 30A continuous at 25°C ambient (package limited 60A at case temperature) and a low on-resistance of 1.8 mOhm at Vgs=10V. Both MOSFETs support logic-level gate drive with a maximum gate threshold voltage of 2.7V.

 

The internal switch node connection simplifies PCB layout for synchronous buck converters, reducing inductance and switch node ringing. The device is suitable for computing, communications, and general point-of-load applications, including notebook VCORE regulation.

 

The FDMS3660S-F121 is housed in an 8-PowerTDFN package (Power56 case) for surface mount assembly. It is Pb-free and RoHS compliant. The operating junction temperature range is -55°C to +150°C.

FDMS3660S-F121 Quick Information

Product Type: MOSFET Array
Series: PowerTrench Power Stage
Canonical Name: FDMS3660S-F121 Asymmetric Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET Array

FDMS3660S-F121 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDMS3660S-F121 Features

  • Asymmetric dual N-channel MOSFET design.
  • Low on-resistance: 8 mOhm and 1.8 mOhm.
  • Logic level gate drive capability.
  • Internal switch node for easy layout.
  • RoHS compliant and Pb-free package.

FDMS3660S-F121 Applications

  • Synchronous buck converter power stages.
  • Notebook and desktop VCORE regulation.
  • General point-of-load DC-DC converters.
  • Computing and communications equipment.

FDMS3660S-F121 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30V for both MOSFETs.

What package is the FDMS3660S-F121 available in?

8-PowerTDFN (Power56 case).

What is the operating junction temperature range?

-55°C to +150°C.

Is the FDMS3660S-F121 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What are the continuous drain current ratings?

Q1: 13A at TA=25°C (30A package limited at TC=25°C); Q2: 30A at TA=25°C (60A package limited at TC=25°C).

What is the on-resistance for each MOSFET?

Q1: 8 mOhm max at Vgs=10V, Id=13A; Q2: 1.8 mOhm max at Vgs=10V, Id=30A.

What is the gate charge of Q1?

Maximum 29 nC at Vgs=10V.

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