| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
636,000 pcs
|
636000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
56,500 pcs
|
56500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,251 pcs
|
6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,534 pcs
|
4534 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
3,620 pcs
|
3620 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
2,410 pcs
|
2410 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3660S is an asymmetric dual N-Channel MOSFET designed by onsemi, part of the PowerTrench/C0041 power stage family. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) in a single 8-PowerTDFN (Power56) package, with the switch node internally connected to simplify synchronous buck converter layouts.
Key specifications include a drain-to-source voltage of 30 V for both MOSFETs. Q1 offers a maximum rDS(on) of 8 mΩ at VGS=10 V, ID=13 A, and 11 mΩ at VGS=4.5 V, ID=11 A. Q2 provides lower on-resistance: 1.8 mΩ at VGS=10 V, ID=30 A, and 2.2 mΩ at VGS=4.5 V, ID=27 A. Continuous drain current is package-limited to 30 A (Q1) and 60 A (Q2) at TC=25°C. The device supports pulsed drain currents of 40 A (Q1) and 120 A (Q2), and single-pulse avalanche energy of 33 mJ (Q1) and 86 mJ (Q2).
The MOSFETs feature logic-level gates (Vgs(th) max 2.7 V) and are suitable for low-voltage drive. Gate charge is 29 nC at VGS=10 V. The device is surface-mountable, rated for operating junction temperatures from -55°C to 150°C, and is RoHS compliant and Pb-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.10 | $3.10 |
| 10+ | $2.00 | $2.00 |
| 100+ | $1.37 | $1.37 |
| 500+ | $1.11 | $1.11 |
| 1,000+ | $1.03 | $1.03 |
| 3,000+ | $1.00 | $1.00 |
| 6,000+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Both MOSFETs have a maximum drain-to-source voltage of 30 V.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant and Pb-free according to the datasheet.
It is available in an 8-PowerTDFN package (Power56 case), surface mount.
Q1: max 8 mΩ at VGS=10V, ID=13A; Q2: max 1.8 mΩ at VGS=10V, ID=30A.
The typical gate charge is 29 nC at VGS=10V.
Yes, the maximum gate threshold voltage is 2.7V at ID=250µA, allowing direct drive from 3.3V logic.