| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3660AS is a dual N-channel MOSFET from On Semiconductor, designed for power management applications. It integrates two independent MOSFETs in a single 8-PowerTDFN package, enabling compact designs.
Electrical specifications include a maximum drain-source voltage of 30V. Channel 1 is rated for 13A continuous drain current, while channel 2 supports up to 30A. The on-resistance is typically 8mOhm at Vgs=10V, ensuring low conduction losses. With a maximum gate threshold voltage of 2.7V, the device is compatible with logic-level gate drive signals.
The device is housed in a surface mount 8-PowerTDFN package (Power56) with an exposed pad for efficient thermal management. It operates over a junction temperature range of -55°C to 150°C. The FDMS3660AS is RoHS compliant and has a moisture sensitivity level of 1, indicating unlimited shelf life prior to soldering.
30V.
8-PowerTDFN (Power56) surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
8mOhm at Vgs=10V, Id=13A.
Maximum 2.7V at Id=250µA.