| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,970 pcs
|
5970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3626S is a dual N-channel power MOSFET from On Semiconductor, configured as asymmetrical channels with current ratings of 17.5 A and 25 A. It features a drain-source voltage of 25 V and a very low maximum on-resistance of 5 mΩ at 10 V gate drive. The logic level gate technology allows direct drive from low-voltage logic circuits, simplifying interface design. Gate charge is limited to 26 nC, contributing to reduced switching losses in high-frequency applications. Input capacitance is 1570 pF at 13 V drain-source, enabling manageable gate drive requirements. The device is housed in a compact 8-PowerTDFN package with Power56 footprint, suitable for surface mount assembly. Operating junction temperature ranges from -55°C to 150°C. This MOSFET array is ideal for DC-DC converters, load switches, and power management circuits where dual-channel control with low conduction losses is required.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25 V.
The operating junction temperature range is -55°C to 150°C.
The device is available in 8-PowerTDFN package with Power56 supplier device package.
The part is listed as RoHS3 compliant, but this status is unverified.
Maximum on-resistance (Rds on) is 5 mΩ at Id=17.5A, Vgs=10V.
Maximum gate charge (Qg) is 26 nC at Vgs=10V.
Yes, it features logic level gate, with maximum gate threshold voltage of 2V at Id=250µA.