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FDMS3622S Dual N-Channel MOSFET array rated for 25V drain-source voltage. Supports 17.5A and 34A continuous drain currents with 5mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

FDMS3622S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel MOSFET array rated for 25V drain-source voltage. Supports 17.5A and 34A continuous drain currents with 5mOhm maximum on-resistance at 10V gate drive.
Total Stock: 2,691 pcs
$ Price Range: $0.72 - $2.46

FDMS3622S Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,691 pcs
2691 pcs On Request 1 On Request On Request 1230+ On Request On Request

FDMS3622S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (Nominal @ Q 2)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMS3622S Description

Short technical summary and product information.

The FDMS3622S is a dual N-Channel MOSFET array from On Semiconductor (onsemi) featuring an asymmetrical configuration with two independent MOSFETs. The device is rated for a drain-source voltage of 25V and supports continuous drain currents of 17.5A for the first channel (Q1) and 34A for the second channel (Q2). It offers a maximum on-resistance of 5mOhm at 10V gate drive, making it suitable for low-loss power switching applications.

 

The MOSFET includes a logic-level gate feature, allowing direct drive from low-voltage logic circuits. Key electrical characteristics include a maximum gate charge of 26nC at 10V and an input capacitance of 1570pF at 13V drain-source voltage. The device is designed for surface-mount assembly and is housed in a compact 8-PowerTDFN package (Power56 supplier device package).

 

With an operating temperature range of -55°C to 150°C, the FDMS3622S is suitable for demanding environments. Its power dissipation is rated at 1W. The asymmetrical currents (17.5A and 34A) enable flexible design in applications such as DC-DC converters, load switching, and battery management where different current handling per channel is required.

FDMS3622S Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: MOSFET 2N-CH 25V 17.5/34A PWR56
Subcategory: Dual N-Channel MOSFET

FDMS3622S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS3622S Estimated Pricing

Qty Low High
1+ $2.46 $2.46
10+ $1.58 $1.58
100+ $1.08 $1.08
500+ $0.91 $0.91
1,000+ $0.85 $0.85
3,000+ $0.72 $0.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS3622S Features

  • Dual N-Channel MOSFET in asymmetrical configuration.
  • Rated for 25V drain-source voltage.
  • Supports 17.5A and 34A continuous drain currents.
  • Low on-resistance of 5mOhm at 10V gate drive.
  • Logic level gate drive for easy interfacing.

FDMS3622S Applications

  • Used in power management for DC-DC converters.
  • Suitable for load switching and battery protection.
  • Ideal for motor control and relay drivers.
  • Application in notebook and desktop power systems.

FDMS3622S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS3622S?

The drain-source voltage (Vdss) is 25V.

What package does the FDMS3622S come in?

It is offered in an 8-PowerTDFN package, with the supplier device package designated as Power56.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FDMS3622S RoHS compliant?

The device is listed as RoHS3 Compliant, but this status is unverified.

What are the continuous drain current ratings?

Q1 (first channel) is rated for 17.5A, and Q2 (second channel) for 34A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at 250µA drain current.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 5mOhm at 17.5A drain current and 10V gate drive.

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