| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3615S is a dual N-channel MOSFET from ON Semiconductor. It features an asymmetrical configuration with two N-channel channels rated at 16A and 18A continuous drain current. The device is designed for a maximum drain-to-source voltage of 25V and offers a low maximum on-resistance of 5.8mΩ at a gate-to-source voltage of 10V.
With a logic-level gate feature, the MOSFET can be driven at lower gate voltages, making it suitable for modern controllers. Maximum gate threshold voltage is 2.5V at 250µA drain current. Total gate charge is rated at 27nC at Vgs=10V, and input capacitance is 1765pF at Vds=13V. The device is fabricated using standard MOSFET (metal-oxide) technology.
The device operates over a junction temperature range of -55°C to 150°C and is rated for 1W power dissipation. It is supplied in an 8-PowerTDFN package (also known as Power56) for surface mount assembly, which supports compact power management designs. The dual-channel configuration can simplify PCB layout in half-bridge or synchronous rectifier circuits.
The maximum drain-to-source voltage (Vdss) is 25V.
The FDMS3615S is offered in an 8-PowerTDFN package with supplier device package Power56 for surface mount.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant in the existing database, though unverified.
It has 2 N-Channel (Dual) Asymmetrical MOSFETs.
The maximum on-resistance is 5.8mΩ at Id=16A and Vgs=10V.
Yes, the FET feature includes Logic Level Gate, allowing control at lower gate voltages.