| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3610S is a dual N-channel asymmetrical MOSFET manufactured by ON Semiconductor. It is designed for applications requiring two MOSFETs in a single compact package, with asymmetrical current ratings of 17.5A for channel 1 and 30A for channel 2. The device supports a maximum drain-to-source voltage of 25V and features a low maximum on-resistance of 5mOhm at 10V gate drive.
This MOSFET array incorporates logic-level gate drive capability, enabling direct interfacing with low-voltage control logic. The input capacitance is 1570pF at 13V drain-source, and the maximum gate charge is 26nC at 10V, supporting efficient switching in moderate-frequency applications.
The device is packaged in an 8-PowerTDFN (Power56) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C, with a power dissipation rating of 1W. The FDMS3610S is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25V.
The operating junction temperature range is -55°C to 150°C.
The FDMS3610S is available in an 8-PowerTDFN surface-mount package, also known as Power56.
Yes, the FDMS3610S is RoHS3 compliant (unverified).
The maximum on-resistance (Rds(on)) is 5mOhm at 17.5A and 10V gate-source voltage.
The maximum gate charge (Qg) is 26nC at 10V gate-source voltage.
The maximum input capacitance (Ciss) is 1570pF at 13V drain-source voltage.