| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,800 pcs
|
3800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
178 pcs
|
178 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3606S is a dual N-channel asymmetric MOSFET array designed by On Semiconductor for synchronous buck converter applications. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) in a single Power56 package, with the switch node internally connected for simplified layout.
Key electrical specifications include a drain-source voltage rating of 30V for both MOSFETs. Q1 offers a maximum on-resistance of 8 mΩ at VGS=10V and ID=13A, while Q2 achieves 1.9 mΩ at VGS=10V and ID=27A. The device supports logic-level gate drive with a maximum gate threshold voltage of 2.7V. Continuous drain current is rated at 13A for Q1 and 27A at TA=25°C, with higher ratings at case temperature (60A and 148A respectively). Pulsed drain current reaches 40A for Q1 and 100A for Q2.
The device is housed in an 8-PowerTDFN surface-mount package (Power56) and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant, Pb-free, and halide free. Typical applications include computing, communications, general-purpose point-of-load converters, and notebook VCORE power stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.10 | $2.10 |
| 10+ | $1.35 | $1.35 |
| 100+ | $0.91 | $0.91 |
| 500+ | $0.73 | $0.73 |
| 1,000+ | $0.67 | $0.67 |
| 3,000+ | $0.65 | $0.65 |
| 6,000+ | $0.62 | $0.62 |
| 9,000+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V for both MOSFETs.
It comes in an 8-PowerTDFN surface-mount package, also known as Power56.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant, Pb-free, and halide free.
At TA=25°C, Q1 is rated for 13A and Q2 for 27A. At TC=25°C (silicon limited), Q1 is 60A and Q2 is 148A.
Q1 has a maximum RDS(on) of 8 mΩ at VGS=10V, ID=13A. Q2 has 1.9 mΩ at VGS=10V, ID=27A.
The maximum gate threshold voltage is 2.7V at ID=250µA.