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FDMS3604S Dual N-Channel asymmetrical MOSFET with 30V drain-source breakdown voltage and 13A/23A continuous drain current. Surface mount in Power56 package.
Mfr Part #:

FDMS3604S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel asymmetrical MOSFET with 30V drain-source breakdown voltage and 13A/23A continuous drain current. Surface mount in Power56 package.
✓ Total Stock: 1,344 pcs
$ Price Range: $0.63 - $2.20

FDMS3604S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,035 pcs
On Request
1035 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
309 pcs
On Request
309 pcs On Request 1 On Request On Request 1228+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMS3604S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDMS3604S Description

Short technical summary and product information.

FDMS3604S is a dual N-channel asymmetrical MOSFET from ON Semiconductor designed for high-efficiency power conversion applications. It features a 30V drain-source breakdown voltage and supports continuous drain currents of 13A for the control FET and 23A for the synchronous FET. The device offers a maximum on-resistance of 8 mOhm at 10V gate drive and 13A, with a gate charge of 29 nC for low switching losses. Input capacitance is 1785 pF at 15V Vds. The logic-level gate threshold allows direct drive from low-voltage logic circuits. Housed in a compact 8-PowerTDFN package (Supplier Device Package: Power56), it is suitable for surface mount assembly. Operating temperature range is -55°C to 150°C.

FDMS3604S Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: FDMS3604S - Dual N-Channel Asymmetrical MOSFET, 30V, 13A/23A, Power56
Subcategory: MOSFET Arrays

FDMS3604S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS3604S Estimated Pricing

Qty Low High
1+ $2.20 $2.20
10+ $1.41 $1.41
100+ $0.95 $0.95
500+ $0.76 $0.76
1,000+ $0.69 $0.69
3,000+ $0.63 $0.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS3604S Features

  • Dual N-channel asymmetrical MOSFET design.
  • 30V drain-source breakdown voltage.
  • 13A and 23A continuous drain currents.
  • 8 mOhm on-resistance at 10V drive.
  • Logic-level gate threshold for low voltage drive.

FDMS3604S Applications

  • Used in synchronous buck converters.
  • Ideal for DC-DC power supplies.
  • Suitable for battery power management.

FDMS3604S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FDMS3604S?

30V minimum.

What package does the FDMS3604S come in?

8-PowerTDFN surface mount package (Supplier Package: Power56).

What is the operating temperature range of FDMS3604S?

-55°C to 150°C junction temperature.

Is the FDMS3604S RoHS compliant?

Product data indicates RoHS3 Compliant, but this has not been independently verified.

What is the configuration of the FDMS3604S?

2 N-Channel (Dual) Asymmetrical MOSFET.

What are the continuous drain current ratings?

13 A for the control FET and 23 A for the synchronous FET.

What is the on-resistance of the FDMS3604S?

8 mOhm maximum at Vgs=10V and Id=13A.

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