FDMS3602S Dual N-Channel logic level gate MOSFET rated for 25V drain-source voltage and 15A/26A continuous drain current, in a Power56 surface-mount package.
Mfr Part #:

FDMS3602S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel logic level gate MOSFET rated for 25V drain-source voltage and 15A/26A continuous drain current, in a Power56 surface-mount package.
✓ Total Stock: 88,511 pcs
$ Price Range: $1.43 - $4.04

FDMS3602S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
88,507 pcs
88507 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4 pcs
4 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS3602S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMS3602S Description

Short technical summary and product information.

The FDMS3602S is a dual N-Channel MOSFET from On Semiconductor featuring a logic level gate. It is designed for surface-mount applications in the 8-PowerTDFN package with a Power56 supplier device package. The device offers a maximum drain-source voltage (Vdss) of 25V and supports continuous drain currents of 15A per channel with a combined total rating of 26A. On-resistance is specified at a maximum of 5.6mΩ at 15A and 10V gate drive. The maximum gate threshold voltage is 3V at 250µA drain current. The device has a maximum gate charge of 27nC at 10V and a maximum input capacitance of 1680pF at 13V drain-source voltage. Maximum power dissipation is 1W. Operating junction temperature ranges from -55°C to 150°C. The FDMS3602S is suitable for a variety of power management and switching applications requiring compact footprint and efficient performance.

FDMS3602S Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDMS3602S Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

FDMS3602S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS3602S Estimated Pricing

Qty Low High
1+ $4.04 $4.04
10+ $2.65 $2.65
100+ $1.97 $1.97
500+ $1.62 $1.62
1,000+ $1.58 $1.58
3,000+ $1.43 $1.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS3602S Features

  • Dual N-Channel MOSFET with logic level gate.
  • Maximum 25V drain-source voltage.
  • Low 5.6mΩ on-resistance at 15A, 10V.
  • Surface-mount Power56 package.

FDMS3602S Applications

  • DC-DC converters and voltage regulator modules.
  • Load switching in portable devices.
  • Battery protection and management circuits.

FDMS3602S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS3602S?

25V.

What is the maximum continuous drain current for the FDMS3602S?

15A per channel and 26A total for the dual configuration.

What is the on-resistance of the FDMS3602S?

Maximum 5.6mΩ at 15A drain current and 10V gate voltage.

What is the operating temperature range of the FDMS3602S?

-55°C to 150°C (junction).

What is the package type for the FDMS3602S?

8-PowerTDFN surface-mount package, supplier device package Power56.

Is the FDMS3602S RoHS compliant?

Marked as RoHS3 compliant but not verified.

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