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FDMS3602AS Dual N-channel asymmetrical MOSFET (N-CH 2) in a Power56 surface-mount package. Rated for 25V drain-source voltage and maximum currents of 15A and 26A.
Mfr Part #:

FDMS3602AS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel asymmetrical MOSFET (N-CH 2) in a Power56 surface-mount package. Rated for 25V drain-source voltage and maximum currents of 15A and 26A.
✓ Total Stock: 8,017 pcs
$ Price Range: $0.98 - $3.10

FDMS3602AS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
8,017 pcs
On Request
8017 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMS3602AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDMS3602AS Description

Short technical summary and product information.

The FDMS3602AS is a dual N-channel asymmetrical MOSFET from ON Semiconductor, designed for efficient power switching in compact surface-mount applications.

 

Key electrical specifications include a maximum drain-source voltage of 25V, with drain current ratings of 15A and 26A for the two MOSFETs. The maximum on-resistance is 5.6mOhm at Vgs=10V and Id=15A, ensuring low conduction losses. The device features a logic-level gate threshold voltage of 3V maximum at Id=250µA, and a maximum gate charge of 27nC at Vgs=10V.

 

Housed in the Power56 (8-PowerTDFN) surface-mount package, the component supports an operating temperature range of -55°C to 150°C and offers maximum power dissipation of 2.2W and 2.5W. Typical applications benefit from the low on-resistance and logic-level drive capability.

FDMS3602AS Quick Information

Product Type: MOSFET Array
Canonical Name: FDMS3602AS Discrete Semiconductor Product
Subcategory: Dual N-Channel MOSFET

FDMS3602AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS3602AS Estimated Pricing

Qty Low High
1+ $3.10 $3.10
10+ $1.70 $1.70
100+ $1.22 $1.22
500+ $1.06 $1.06
3,000+ $0.98 $0.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS3602AS Features

  • 25V maximum drain-source voltage rating.
  • Dual N-channel asymmetrical configuration.
  • 5.6mOhm on-resistance at 10V gate drive.
  • Logic-level gate threshold for low-voltage drive.
  • Power56 surface-mount package for compact design.

FDMS3602AS Applications

  • Ideal for low-voltage power distribution.
  • Suitable for load switching and DC-DC converters.
  • Used in battery management and protection circuits.
  • Applicable for notebook and portable device power.

FDMS3602AS FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS3602AS?

25V.

What is the maximum drain current rating?

15A and 26A (asymmetrical dual configuration).

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this device in?

Power56 (8-PowerTDFN), surface mount.

Does the FDMS3602AS have a logic-level gate?

Yes, the device features a logic-level gate with a maximum threshold voltage of 3V at 250µA.

What is the maximum on-resistance?

5.6mOhm at Vgs=10V and Id=15A.

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