| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,535 pcs
|
6535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMS3600AS is a dual N-channel MOSFET from ON Semiconductor, configured as an asymmetrical pair (Q1: 15A, Q2: 30A) with a maximum drain-to-source voltage of 25V. It uses logic level gate technology for low-voltage drive compatibility.
Electrical characteristics include a maximum on-resistance of 5.6 mOhm at 15A and 10V gate drive, gate charge of 27 nC at 10V, and input capacitance of 1770 pF at 13V. The device is built with metal oxide semiconductor technology.
The FDMS3600AS is offered in an 8-PowerTDFN surface mount package, designated as Power56. It supports an operating junction temperature range of -55°C to 150°C, with maximum power dissipation of 2.2W for Q1 and 2.5W for Q2.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.19 | $3.19 |
| 10+ | $2.07 | $2.07 |
| 100+ | $1.43 | $1.43 |
| 500+ | $1.06 | $1.06 |
| 3,000+ | $0.90 | $0.90 |
| 6,000+ | $0.90 | $0.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 25 V.
The package is 8-PowerTDFN, and the supplier device package is Power56.
The operating junction temperature range is -55°C to 150°C.
The database lists it as RoHS3 Compliant, but this is unverified and should be confirmed from official documentation.
The continuous drain current is 15 A for Q1 and 30 A for Q2 (asymmetrical dual).
The maximum gate threshold voltage is 2.7 V at 250 µA.