| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS3572 is an N-Channel MOSFET manufactured by On Semiconductor using UltraFET Trench technology. It is designed for high-efficiency power conversion applications, particularly high-frequency DC-DC converters. The device offers a drain-source voltage rating of 80V and a continuous drain current of 22A when package-limited at case temperature 25°C, or 8.8A at ambient temperature. The silicon-limited current rating is 48A, and pulsed drain current can reach 50A.
Key electrical characteristics include a maximum on-resistance of 16.5mOhm at VGS=10V and ID=8.8A, and 24mOhm at VGS=6V and ID=8.4A. The typical gate charge is 28nC at VGS=10V, with a maximum of 40nC, and the input capacitance is 2490pF at VDS=40V. The device features low Miller charge, contributing to efficient high-frequency switching. Power dissipation is rated at 78W at case temperature 25°C and 2.5W at ambient temperature. The operating junction temperature range is -55°C to 150°C.
The FDMS3572 is housed in an 8-PowerWDFN surface-mount package, also known as Power56 or 8-MLP (5x6). The package is designed for optimal thermal performance with a junction-to-case thermal resistance of 1.6°C/W. The device is Pb-Free, Halide Free, and RoHS compliant per the datasheet, making it suitable for environmentally sensitive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.85 | $3.85 |
| 10+ | $2.52 | $2.52 |
| 100+ | $1.79 | $1.79 |
| 500+ | $1.55 | $1.55 |
| 1,000+ | $1.44 | $1.44 |
| 3,000+ | $1.34 | $1.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 80V.
It is available in an 8-PowerWDFN surface-mount package, also known as Power56 or 8-MLP (5x6).
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is Pb-Free, Halide Free, and RoHS Compliant.
The continuous drain current is 22A (package limited) at TC=25°C, 48A (silicon limited), and 8.8A at TA=25°C. Pulsed drain current is 50A.
The maximum on-resistance is 16.5mOhm at VGS=10V and ID=8.8A, and 24mOhm at VGS=6V and ID=8.4A.
The gate threshold voltage is 4V maximum at ID=250µA (VGS=VDS). Typical value is 3.2V.