FDMS2D4N03S N-Channel MOSFET rated for 30V drain-source voltage and 163A continuous drain current. Features low on-resistance of 1.8mOhm at 28A, 10V gate drive.
Mfr Part #:

FDMS2D4N03S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 30V drain-source voltage and 163A continuous drain current. Features low on-resistance of 1.8mOhm at 28A, 10V gate drive.
Total Stock: 56,593 pcs
$ Price Range: $0.28

FDMS2D4N03S Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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56,593 pcs
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FDMS2D4N03S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Gate Drive Voltage (Nominal @ Min Rds On)
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS2D4N03S Description

Short technical summary and product information.

The FDMS2D4N03S is an N-Channel power MOSFET from On Semiconductor. It is designed for high-efficiency power management applications requiring a 30V drain-source voltage rating and a continuous drain current of 163A. With a maximum on-resistance of only 1.8mOhm at 28A and 10V gate drive, this device offers low conduction losses.

 

The MOSFET features a gate threshold voltage of 3V at 1mA and a maximum gate charge of 88nC at 10V, enabling efficient switching. The input capacitance is 6540pF at 15V drain-source voltage, and the device can handle a maximum power dissipation of 75W at case temperature.

 

Housed in an 8-PowerSMD (PQFN) package with flat leads, the FDMS2D4N03S supports surface mount assembly. The supplier device package is 8-PQFN (5x6) Power56, suitable for compact designs. The operating junction temperature range is -55°C to 150°C.

 

This MOSFET is suitable for applications such as power supplies, DC-DC converters, and motor control circuits where high current handling and low on-resistance are critical.

FDMS2D4N03S Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDMS2D4N03S – N-Channel Power MOSFET, 30V, 163A, 8-PQFN (5x6) Power56
Subcategory: N-Channel MOSFET

FDMS2D4N03S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDMS2D4N03S Estimated Pricing

Qty Low High
3,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS2D4N03S Features

  • 30V drain-source voltage rating.
  • 163A continuous drain current.
  • Low 1.8mOhm on-resistance at 28A.
  • Surface mount 8-PQFN package.
  • Operating temperature range -55°C to 150°C.

FDMS2D4N03S Applications

  • Suitable for power supply circuits.
  • Used in DC-DC converter modules.
  • Ideal for motor control applications.
  • Works in high-current switching designs.

FDMS2D4N03S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS2D4N03S?

30 V.

What is the maximum continuous drain current?

163 A at case temperature.

What is the on-resistance of the FDMS2D4N03S?

1.8 mOhm maximum at 28A drain current and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the FDMS2D4N03S available in?

8-PowerSMD (PQFN) with flat leads, supplier device package 8-PQFN (5x6) Power56.

Is the FDMS2D4N03S RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the gate threshold voltage?

Maximum 3V at 1mA drain current.

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