| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,878 pcs
|
1878 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This product is a single N-Channel MOSFET designed using PowerTrench technology and SyncFET architecture from ON Semiconductor. It features a maximum drain-source voltage of 30V and continuous drain current of 218A, making it suitable for high-current applications. The drain-source on-resistance is only 1.15mOhm at 40A with 10V gate drive, enabling efficient power conversion.
The device has a maximum gate threshold voltage of 2V at 250µA and supports drive voltages of 4.5V and 10V for minimum on-resistance. Total gate charge is 63nC at 4.5V. Maximum power dissipation is 83W at the case temperature. Housed in a compact 8-PQFN (5x6) surface-mount package, this MOSFET is designed for high-density power management circuits.
Typical applications include voltage regulator modules, DC-DC converters, synchronous rectification, and motor drive circuits where low conduction losses and small footprint are required.
| Qty | Low | High |
|---|---|---|
| 1,878+ | $0.96 | $0.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
218A at case temperature.
1.15mOhm maximum at 40A drain current and 10V gate drive.
8-PQFN (5x6) surface-mount package.
RoHS3 compliant per available unverified distributor data.
2V maximum at 250µA drain current.