| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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220 pcs
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220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel power MOSFET is designed for high-efficiency switching applications. It offers a maximum drain-to-source voltage of 30 V and can handle a continuous drain current of 211 A at case temperature. The device features an ultra-low on-resistance of 1.09 mOhm (max) at a gate drive of 10 V and 38 A drain current. The gate charge is 65 nC at 4.5 V, and input capacitance is 10250 pF at 15 V drain-source bias.
The MOSFET integrates a Schottky diode body, which helps improve switching performance and reduce reverse recovery losses. It operates over a junction temperature range of -55°C to 150°C and dissipates up to 74 W at case temperature. The device is packaged in an 8-PowerTDFN (8-PQFN 5x6) surface-mount package, suitable for compact power system designs.
Typical applications include DC-DC converters, load switches, and power management in computing, telecom, and industrial systems requiring low conduction losses and high current handling. The recommended gate drive voltages are 4.5 V for minimum on-resistance and 10 V for optimized Rds(on).
The maximum drain-to-source voltage is 30 V.
The maximum drain current is 211 A at case temperature (Tc).
The maximum on-resistance is 1.09 mOhm at Id = 38 A and Vgs = 10 V.
It comes in an 8-PowerTDFN surface-mount package (supplier device package 8-PQFN 5x6).
The operating junction temperature range is -55°C to 150°C.
RoHS3 compliance is unverified but listed as compliant in the database.
The maximum gate threshold voltage is 3 V at Id = 1 mA.