| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,416 pcs
|
64416 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS10C4D2N is an N-Channel Power MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 17A at case temperature. The device has a maximum on-resistance of 4.2mOhm at 44A gate drive of 10V. Gate charge is 65nC at 10V, and input capacitance is 4500pF at 50V.
The MOSFET is designed for high-efficiency power conversion applications, such as DC-DC converters and motor control. The low Rds(on) minimizes conduction losses, while the moderate gate charge enables fast switching. The device is capable of operating over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 125W.
The FDMS10C4D2N is housed in a surface-mount 8-PowerTDFN (8-PQFN 5x6) package, suitable for automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.10 | $4.10 |
| 10+ | $2.69 | $2.69 |
| 100+ | $1.89 | $1.89 |
| 500+ | $1.57 | $1.57 |
| 1,000+ | $1.54 | $1.54 |
| 3,000+ | $1.54 | $1.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
8-PowerTDFN (8-PQFN 5x6).
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
65nC max at 10V.
4.2mOhm max at 44A, 10V.
17A at case temperature.