| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS0355S is an N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage rating of 30V and continuous drain current of 22A at case temperature (Tc). The device exhibits a low on-resistance of 5mOhm maximum at 18A drain current with 10V gate drive. Gate charge is 31nC at 10V, and input capacitance is 1815pF at 15V drain-source voltage. The MOSFET is designed for surface mount assembly and is supplied in an 8-PowerTDFN package, also known as 8-PQFN (5x6) Power56. It can be driven with gate voltages of 4.5V or 10V for optimal performance. The device operates over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 36W at case temperature. This MOSFET is suitable for high-efficiency power conversion applications, such as DC-DC converters and load switches, where low on-resistance and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 757+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
22A at case temperature (Tc), 18A at ambient temperature (Ta).
5 mOhm maximum at 18A drain current with 10V gate drive.
31 nC maximum at 10V gate-source voltage.
1815 pF maximum at 15V drain-source voltage.
-55°C to 150°C junction temperature.
The product is listed as RoHS3 compliant, but this is unverified.